STGW35NB60SD
Symbol Micros:
TSTGW35nb60sd
Case : TO247
70A; 600V; 200W; IGBT
Parameters
| Gate charge: | 115nC |
| Max. dissipated power: | 200W |
| Max. collector current: | 70A |
| Max collector current (impulse): | 250A |
| Forvard volatge [Vgeth]: | 2,5V ~ 5,0V |
| Case: | TO247 |
| Manufacturer: | STMicroelectronics |
| Gate charge: | 115nC |
| Max. dissipated power: | 200W |
| Max. collector current: | 70A |
| Max collector current (impulse): | 250A |
| Forvard volatge [Vgeth]: | 2,5V ~ 5,0V |
| Case: | TO247 |
| Manufacturer: | STMicroelectronics |
| Collector-emitter voltage: | 600V |
| Operating temperature (range): | -55°C ~ 150°C |
| Gate-emitter voltage: | 20V |
| Mounting: | THT |
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