STGF14NC60KD

Symbol Micros: TSTGF14nc60kd
Contractor Symbol:
Case : TO220FP
Trans IGBT Chip N-CH 600V 11A 28000mW 3-Pin(3+Tab) TO-220FP
Parameters
Gate charge: 34,4nC
Max. dissipated power: 28W
Max. collector current: 11A
Max collector current (impulse): 50A
Forvard volatge [Vgeth]: 4,5V ~ 6,5V
Case: TO220FP
Manufacturer: STMicroelectronics
         
 
Item available on request
Gate charge: 34,4nC
Max. dissipated power: 28W
Max. collector current: 11A
Max collector current (impulse): 50A
Forvard volatge [Vgeth]: 4,5V ~ 6,5V
Case: TO220FP
Manufacturer: STMicroelectronics
Collector-emitter voltage: 600V
Operating temperature (range): -55°C ~ 150°C
Gate-emitter voltage: 20V
Mounting: SMD