STGB10NC60HD

Symbol Micros: TSTGB10nc60hd
Contractor Symbol:
Case : D2PAK
Trans IGBT Chip N-CH 600V 20A 65000mW 3-Pin(2+Tab) D2PAK
Parameters
Gate charge: 19,2nC
Max. dissipated power: 65W
Max. collector current: 20A
Max collector current (impulse): 30A
Forvard volatge [Vgeth]: 3,75V ~ 5,75V
Case: D2PAK
Manufacturer: STMicroelectronics
         
 
Item available on request
Gate charge: 19,2nC
Max. dissipated power: 65W
Max. collector current: 20A
Max collector current (impulse): 30A
Forvard volatge [Vgeth]: 3,75V ~ 5,75V
Case: D2PAK
Manufacturer: STMicroelectronics
Collector-emitter voltage: 600V
Operating temperature (range): -55°C ~ 150°C
Gate-emitter voltage: 20V