STGB10NC60HD
Symbol Micros:
TSTGB10nc60hd
Case : D2PAK
Trans IGBT Chip N-CH 600V 20A 65000mW 3-Pin(2+Tab) D2PAK
Parameters
Gate charge: | 19,2nC |
Max. dissipated power: | 65W |
Max. collector current: | 20A |
Max collector current (impulse): | 30A |
Forvard volatge [Vgeth]: | 3,75V ~ 5,75V |
Case: | D2PAK |
Manufacturer: | STMicroelectronics |
Gate charge: | 19,2nC |
Max. dissipated power: | 65W |
Max. collector current: | 20A |
Max collector current (impulse): | 30A |
Forvard volatge [Vgeth]: | 3,75V ~ 5,75V |
Case: | D2PAK |
Manufacturer: | STMicroelectronics |
Collector-emitter voltage: | 600V |
Operating temperature (range): | -55°C ~ 150°C |
Gate-emitter voltage: | 20V |
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