PMGD280UN NEXPERIA

Symbol Micros: TPMGD280un
Contractor Symbol:
Case : SOT363
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Transistor: N-MOSFET x2; unipolarny; 20V; 0,55A; 400mW; SOT363; PMGD280UN,115
Parameters
Open channel resistance: 340mOhm
Max. drain current: 550mA
Max. power loss: 400mW
Case: SOT363
Manufacturer: NXP
Max. drain-source voltage: 20V
Max. drain-gate voltage: 20V
Manufacturer:: NXP Manufacturer part number: PMGD280UN,115 RoHS Case style: SOT363 t/r Datasheet
In stock:
1 pcs.
Quantity of pcs. 3+ 20+ 100+ 300+ 1000+
Net price (EUR) 0,4360 0,2399 0,1891 0,1751 0,1679
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Packaging:
1
Open channel resistance: 340mOhm
Max. drain current: 550mA
Max. power loss: 400mW
Case: SOT363
Manufacturer: NXP
Max. drain-source voltage: 20V
Max. drain-gate voltage: 20V
Transistor type: MOSFET
Max. gate-source Voltage: 8V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD

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