AP2306GN-HF-3 – Efficient MOSFET with low power loss in a compact package

AP2306GN-HF-3 is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Advanced Power Electronics Corp. This component is commonly used in applications related to power supply, power conversion, and energy management, such as in DC-DC converters, voltage regulators, and power systems for computers and electronic devices. It is a modern N-channel MOSFET with excellent electrical and thermal characteristics, specifically designed for applications requiring high energy efficiency and fast switching. With its low RDS(on) and capability of conducting high current, this transistor is an ideal choice for power supply circuits, voltage converters, and other applications demanding reliability and durability.

Key Features of AP2306GN-HF-3:

1. MOSFET Type: N-channel MOSFET with low on-resistance (RDS(on)), which minimizes power losses.
2. Package: Available in a compact SOT-23 (Small Outline Transistor) package, beneficial for applications where PCB space is limited.
3. Drain-Source Voltage (Vds): 20V - the maximum voltage that can be applied between the drain and source.
4. Drain Current (Id): The maximum current that the transistor can conduct is 5.3A at a temperature of 25°C.
5. Gate Charge (Qg): Low gate charge allows for fast switching, increasing efficiency in high-frequency power circuits.
6. Operating Temperature: The operating temperature range is from -55°C to +150°C, allowing this MOSFET to be used in harsh environmental conditions.

Applications:

• Power Supplies for Devices
• Power Systems for Microcontrollers
• Audio Circuits
• Mobile Devices
• Home Automation
• Sensors and Measurement Devices
• LED Lighting Systems

If you want to check current stock levels and prices, click on the product symbol.