BCV27,215

Symbol Micros: TBCV27
Contractor Symbol:
Case : SOT23
Transistor NPN; 20000; 350mW; 30V; 1,2A; 220MHz; -55°C ~ 150°C; Replacement: BCV27E6327HTSA1; BCV27,215; BCV27E6327; BCV27.215;
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Parameters
Power dissipation: 350mW
Current gain factor: 20000
Manufacturer: ON SEMICONDUCTOR
Cutoff frequency: 220MHz
Case: SOT23
Max. collector current: 1,2A
Max collector-emmiter voltage: 30V
Manufacturer:: NXP Manufacturer part number: BCV27 RoHS Case style: SOT23t/r  
In stock:
410 pcs.
Quantity of pcs. 5+ 20+ 100+ 500+ 3000+
Net price (EUR) 0,1951 0,0926 0,0521 0,0396 0,0355
Add to comparison tool
Packaging:
3000/15000
Power dissipation: 350mW
Current gain factor: 20000
Manufacturer: ON SEMICONDUCTOR
Cutoff frequency: 220MHz
Case: SOT23
Max. collector current: 1,2A
Max collector-emmiter voltage: 30V
Operating temperature (range): -55°C ~ 150°C
Transistor type: NPN