BD681

Symbol Micros: TBD681sgs
Contractor Symbol:
Case : TO126
Transistor NPN; 750; 40W; 100V; 4A; -65°C ~ 150°C; Substitute: BD683; BD681-ST; BD681G; BD681S; BD681STU;
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Parameters
Power dissipation: 40W
Cutoff frequency: 1MHz
Current gain factor: 750
Manufacturer: STMicroelectronics
Case: TO126
Max. collector current: 4A
Max collector-emmiter voltage: 100V
Manufacturer:: ST Manufacturer part number: BD681 RoHS Case style: TO126 Datasheet
In stock:
0 pcs.
Quantity of pcs. 3+ 10+ 50+ 200+ 500+
Net price (EUR) 0,4557 0,2983 0,2135 0,1865 0,1738
Add to comparison tool
Packaging:
50/850
Manufacturer:: ST Manufacturer part number: BD681 Case style: TO126  
External warehouse:
736 pcs.
Quantity of pcs. 50+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,1738
Add to comparison tool
Packaging:
50
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: ST Manufacturer part number: BD681 Case style: TO126  
External warehouse:
61450 pcs.
Quantity of pcs. 50+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,1738
Add to comparison tool
Packaging:
50
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: ST Manufacturer part number: BD681 Case style: TO126  
External warehouse:
103506 pcs.
Quantity of pcs. 50+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,1738
Add to comparison tool
Packaging:
50
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
         
 
Item in delivery
Estimated date:
2024-12-26
Quantity of pcs.: 800
Power dissipation: 40W
Cutoff frequency: 1MHz
Current gain factor: 750
Manufacturer: STMicroelectronics
Case: TO126
Max. collector current: 4A
Max collector-emmiter voltage: 100V
Operating temperature (range): -65°C ~ 150°C
Transistor type: NPN