BSS83PH6327XTSA1

Symbol Micros: TBSS83p
Contractor Symbol:
Case : SOT23
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Transistor P-Channel MOSFET; 60V; 20V; 3Ohm; 330mA; 360mW; -55°C ~ 150°C; Equivalent: BSS83PH6327; BSS83PH6327XTSA1; BSS83P;
Parameters
Open channel resistance: 3Ohm
Max. drain current: 330mA
Max. power loss: 360mW
Case: SOT23
Manufacturer: Infineon Technologies
Max. drain-source voltage: 60V
Transistor type: P-MOSFET
Manufacturer:: Infineon Manufacturer part number: BSS83PH6327XTSA1 RoHS Case style: SOT23t/r Datasheet
In stock:
23340 pcs.
Quantity of pcs. 5+ 20+ 100+ 500+ 3000+
Net price (EUR) 0,2267 0,1254 0,0834 0,0695 0,0647
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Packaging:
3000
Manufacturer:: Infineon Manufacturer part number: BSS83PH6327XTSA1 Case style: SOT23  
External warehouse:
49300 pcs.
Quantity of pcs. 100+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,0647
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Packaging:
100
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 3Ohm
Max. drain current: 330mA
Max. power loss: 360mW
Case: SOT23
Manufacturer: Infineon Technologies
Max. drain-source voltage: 60V
Transistor type: P-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD

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