BSS83PH6327XTSA1

Symbol Micros: TBSS83p
Contractor Symbol:
Case : SOT23
Transistor P-Channel MOSFET; 60V; 20V; 3Ohm; 330mA; 360mW; -55°C ~ 150°C; Equivalent: BSS83PH6327; BSS83PH6327XTSA1; BSS83P;
Parameters
Open channel resistance: 3Ohm
Max. drain current: 330mA
Max. power loss: 360mW
Case: SOT23
Manufacturer: Infineon Technologies
Max. drain-source voltage: 60V
Transistor type: P-MOSFET
Manufacturer:: Infineon Manufacturer part number: BSS83PH6327XTSA1 RoHS Case style: SOT23t/r Datasheet
In stock:
23340 pcs.
Quantity of pcs. 5+ 20+ 100+ 500+ 3000+
Net price (EUR) 0,2216 0,1226 0,0815 0,0680 0,0633
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Packaging:
3000
Manufacturer:: Infineon Manufacturer part number: BSS83PH6327XTSA1 Case style: SOT23  
External warehouse:
42000 pcs.
Quantity of pcs. 3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,0633
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Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: Infineon Manufacturer part number: BSS83PH6327XTSA1 Case style: SOT23  
External warehouse:
61800 pcs.
Quantity of pcs. 1+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,0633
Add to comparison tool
Packaging:
1
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 3Ohm
Max. drain current: 330mA
Max. power loss: 360mW
Case: SOT23
Manufacturer: Infineon Technologies
Max. drain-source voltage: 60V
Transistor type: P-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD