EL357N(C)(TA) 4SMD

Symbol Micros: OOPC357n3t EVL
Contractor Symbol:
Case : SOIC04
single CTR 200-400% Vce 80V Uiso 3,75kV NPN Phototransistor
Parameters
CTR: 200-400%
Case: SOIC04
Output type: NPN Phototransistor
Insulation breakdown voltage: 3750V
Output voltage: 80V
Manufacturer:: EVERLIGHT Manufacturer part number: EL357N(C)(TA)-G RoHS Case style: SOIC04t/r Datasheet
In stock:
1311 pcs.
Quantity of pcs. 5+ 20+ 100+ 500+ 3000+
Net price (EUR) 0,2256 0,1248 0,0829 0,0692 0,0644
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Packaging:
3000/9000/27000
Manufacturer:: EVERSPIN Manufacturer part number: EL357N(C)(TA)-G Case style: SOIC04  
External warehouse:
2250 pcs.
Quantity of pcs. 25+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,0953
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Packaging:
25
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
         
 
Item in delivery
Estimated date:
2025-03-17
Quantity of pcs.: 5000
CTR: 200-400%
Case: SOIC04
Output type: NPN Phototransistor
Insulation breakdown voltage: 3750V
Output voltage: 80V