FDD8896
Symbol Micros:
TFDD8896 VBS
Case : TO252
Transistor N-Channel MOSFET; 30V; +/-20V; 2,1Ohm; 12A; 165W; -55°C~175°C; Substitute: FDD8896-VB; YFW100N03AD;
Parameters
| Open channel resistance: | 2,1Ohm |
| Max. drain current: | 12A |
| Max. power loss: | 165W |
| Case: | TO252 |
| Manufacturer: | VBS |
| Max. drain-source voltage: | 30V |
| Transistor type: | N-MOSFET |
Item in delivery
Estimated date:
2025-04-18
Quantity of pcs.: 5000
| Open channel resistance: | 2,1Ohm |
| Max. drain current: | 12A |
| Max. power loss: | 165W |
| Case: | TO252 |
| Manufacturer: | VBS |
| Max. drain-source voltage: | 30V |
| Transistor type: | N-MOSFET |
| Max. gate-source Voltage: | 20V |
| Operating temperature (range): | -55°C ~ 175°C |
| Mounting: | SMD |
Equivalents
Item available on request
Manufacturer::
UMW
Manufacturer part number:
FDD8896 RoHS
Case style:
TO252 (DPACK) t/r
In stock
100 pcs.
| Quantity of pcs. | 2+ | 10+ | 30+ | 100+ | 400+ |
| Net price (EUR) | 0,6166 | 0,3863 | 0,3211 | 0,2862 | 0,2676 |
Packaging: 100
Quantity (multiple 1)
Manufacturer::
YFW
Manufacturer part number:
YFW100N03AD RoHS
Case style:
DPAK t/r
In stock
150 pcs.
| Quantity of pcs. | 3+ | 10+ | 40+ | 150+ | 600+ |
| Net price (EUR) | 0,3909 | 0,2560 | 0,1880 | 0,1617 | 0,1506 |
Packaging: 150
Quantity (multiple 1)
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