FDN338P JSMICRO
Symbol Micros:
TFDN338p JSM
Case : SOT23
Transistor P-Channel MOSFET; 20V; 8V; 210mOhm; 1,6A; 350mW; -55°C ~ 150°C; Equivalent: FDN338P Onsemi;
Any questions? We will be happy to answer.
Write sales // micros.com.pl or call: +48 785 054 437
Write sales // micros.com.pl or call: +48 785 054 437
Parameters
| Open channel resistance: | 210mOhm |
| Max. drain current: | 1,6A |
| Max. power loss: | 350mW |
| Case: | SOT23 |
| Manufacturer: | JSMICRO |
| Max. drain-source voltage: | 20V |
| Transistor type: | P-MOSFET |
| Open channel resistance: | 210mOhm |
| Max. drain current: | 1,6A |
| Max. power loss: | 350mW |
| Case: | SOT23 |
| Manufacturer: | JSMICRO |
| Max. drain-source voltage: | 20V |
| Transistor type: | P-MOSFET |
| Max. gate-source Voltage: | 8V |
| Operating temperature (range): | -55°C ~ 150°C |
| Mounting: | SMD |
Equivalents
Item available on request
Manufacturer::
UMW
Manufacturer part number:
FDN338P RoHS
Case style:
SOT23t/r
In stock
3000 pcs.
| Quantity of pcs. | 5+ | 20+ | 100+ | 500+ | 3000+ |
| Net price (EUR) | 0,2000 | 0,0949 | 0,0535 | 0,0406 | 0,0363 |
Packaging: 3000
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