IRF1010E JSMICRO

Symbol Micros: TIRF1010 JSM
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Case : TO220
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Transistor N-Channel MOSFET; 60V; 25V; 8,5mOhm; 85A; 200W; -55°C ~ 150°C; Equivalent: IRF1010EPBF; SP001569818;
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Parameters
Open channel resistance: 8,5mOhm
Max. drain current: 85A
Max. power loss: 200W
Case: TO220
Manufacturer: JSMICRO
Max. drain-source voltage: 60V
Transistor type: N-MOSFET
Manufacturer:: JSMicro Semiconductor Manufacturer part number: IRF1010E RoHS Case style: TO220 Datasheet
In stock:
100 pcs.
Quantity of pcs. 1+ 3+ 10+ 50+ 200+
Net price (EUR) 0,8644 0,6342 0,5074 0,4369 0,4111
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Packaging:
50
Open channel resistance: 8,5mOhm
Max. drain current: 85A
Max. power loss: 200W
Case: TO220
Manufacturer: JSMICRO
Max. drain-source voltage: 60V
Transistor type: N-MOSFET
Max. gate-source Voltage: 25V
Operating temperature (range): -55°C ~ 150°C
Mounting: THT

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