IRF510

Symbol Micros: TIRF510
Contractor Symbol:
Case : TO220
Technical drawing Add to favourites
N-MOSFET 4A 100V 40W 0.6Ω
Parameters
Open channel resistance: 540mOhm
Max. drain current: 5,6A
Max. power loss: 43W
Case: TO220
Manufacturer: VISHAY
Max. drain-source voltage: 100V
Transistor type: N-MOSFET
Manufacturer:: Siliconix Manufacturer part number: IRF510 RoHS Case style: TO220  
In stock:
164 pcs.
Quantity of pcs. 2+ 10+ 50+ 200+ 500+
Net price (EUR) 0,7940 0,4997 0,3923 0,3573 0,3456
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Packaging:
50/500
Manufacturer:: Vishay Manufacturer part number: IRF510PBF Case style: TO220  
External warehouse:
900 pcs.
Quantity of pcs. 550+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,3456
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Packaging:
50
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: Vishay Manufacturer part number: IRF510PBF Case style: TO220  
External warehouse:
824 pcs.
Quantity of pcs. 500+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,3456
Add to comparison tool
Packaging:
50
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: - Manufacturer part number: IRF510PBF Case style: TO220  
External warehouse:
500 pcs.
Quantity of pcs. 1+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,3456
Add to comparison tool
Packaging:
50
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 540mOhm
Max. drain current: 5,6A
Max. power loss: 43W
Case: TO220
Manufacturer: VISHAY
Max. drain-source voltage: 100V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 175°C
Mounting: THT

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