IRF630 JSMICRO

Symbol Micros: TIRF630 JSM
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Case : TO220
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Transistor N-Channel MOSFET; 200V; 30V; 400mOhm; 9A; 72W; -55°C ~ 150°C; Equivalent: IRF630PBF; IRF630PBF-BE3; IRF630NPBF; SP001564792;
Parameters
Open channel resistance: 400mOhm
Max. drain current: 9A
Max. power loss: 72W
Case: TO220
Manufacturer: JSMICRO
Max. drain-source voltage: 200V
Transistor type: N-MOSFET
Manufacturer:: JSMicro Semiconductor Manufacturer part number: IRF630 RoHS Case style: TO220 Datasheet
In stock:
100 pcs.
Quantity of pcs. 2+ 10+ 50+ 100+ 400+
Net price (EUR) 0,5861 0,3666 0,2872 0,2709 0,2545
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Packaging:
50/100
Open channel resistance: 400mOhm
Max. drain current: 9A
Max. power loss: 72W
Case: TO220
Manufacturer: JSMICRO
Max. drain-source voltage: 200V
Transistor type: N-MOSFET
Max. gate-source Voltage: 30V
Operating temperature (range): -55°C ~ 150°C
Mounting: THT

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