IRLR2905Z

Symbol Micros: TIRLR2905z
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Case : TO252 (DPACK)
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N-MOSFET HEXFET 55V 42A 110W 0.0135Ω
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Parameters
Open channel resistance: 22,5mOhm
Max. drain current: 60A
Max. power loss: 110W
Case: TO252 (DPACK)
Manufacturer: Infineon (IRF)
Max. drain-source voltage: 55V
Transistor type: N-MOSFET
Manufacturer:: Infineon Manufacturer part number: IRLR2905ZTR RoHS Case style: TO252 (DPACK) t/r  
In stock:
4455 pcs.
Quantity of pcs. 1+ 5+ 20+ 100+ 400+
Net price (EUR) 1,1332 0,7921 0,6729 0,6169 0,5958
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Packaging:
2000
Manufacturer:: Infineon Manufacturer part number: IRLR2905ZTR RoHS Case style: TO252 (DPACK) t/r  
In stock:
15 pcs.
Quantity of pcs. 1+ 2+ 3+ 5+ 15+
Net price (EUR) 1,1332 0,9066 0,8108 0,7197 0,5958
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Packaging:
15
Open channel resistance: 22,5mOhm
Max. drain current: 60A
Max. power loss: 110W
Case: TO252 (DPACK)
Manufacturer: Infineon (IRF)
Max. drain-source voltage: 55V
Transistor type: N-MOSFET
Max. gate-source Voltage: 16V
Operating temperature (range): -55°C ~ 175°C
Mounting: SMD

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