4N35SM

Symbol Micros: OO4N35sm
Contractor Symbol:
Case : PDIP06smd
Single CTR 100% Vce 30V Uiso 4,17kV Transistor with Base 4N35-SMD-I; 4N35SM; 4N35SR2M;
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Parameters
CTR: 100%
Case: DIP06smd
Output type: Transistor with Base
Insulation breakdown voltage: 4170V
Output voltage: 30V
Manufacturer:: ON-Semicoductor Manufacturer part number: 4N35SM RoHS Case style: PDIP06smd  
In stock:
200 pcs.
Quantity of pcs. 2+ 10+ 50+ 100+ 400+
Net price (EUR) 0,5460 0,3433 0,2673 0,2534 0,2373
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Packaging:
50/200
Manufacturer:: ON-Semicoductor Manufacturer part number: 4N35SM Case style: PDIP06smd  
External warehouse:
3000 pcs.
Quantity of pcs. 1+ (Inappropriate quantity? Ask for a different one).
Net price (EUR) 0,2373
Add to comparison tool
Packaging:
1000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: ON-Semicoductor Manufacturer part number: 4N35SM Case style: PDIP06smd  
External warehouse:
2000 pcs.
Quantity of pcs. 1000+ (Inappropriate quantity? Ask for a different one).
Net price (EUR) 0,2373
Add to comparison tool
Packaging:
1000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: ON-Semicoductor Manufacturer part number: 4N35SM Case style: PDIP06smd  
External warehouse:
8124 pcs.
Quantity of pcs. 1+ (Inappropriate quantity? Ask for a different one).
Net price (EUR) 0,2373
Add to comparison tool
Packaging:
1000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
CTR: 100%
Case: DIP06smd
Output type: Transistor with Base
Insulation breakdown voltage: 4170V
Output voltage: 30V