EL357N(C)(TA) 4SMD

Symbol Micros: OOPC357n3t EVL
Contractor Symbol:
Case : SOIC04
Technical drawing Add to favourites
single CTR 200-400% Vce 80V Uiso 3,75kV NPN Phototransistor
Parameters
CTR: 200-400%
Case: SOIC04
Output type: NPN Phototransistor
Insulation breakdown voltage: 3750V
Output voltage: 80V
Manufacturer:: EVERLIGHT Manufacturer part number: EL357N(C)(TA)-G RoHS Case style: SOIC04t/r Datasheet
In stock:
18811 pcs.
Quantity of pcs. 5+ 20+ 100+ 300+ 1000+
Net price (EUR) 0,2200 0,1203 0,0789 0,0682 0,0628
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Packaging:
3000
Manufacturer:: EVERSPIN Manufacturer part number: EL357N(C)(TA)-G Case style: SOIC04  
External warehouse:
2250 pcs.
Quantity of pcs. 25+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,0952
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Packaging:
25
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: EVERLIGHT Manufacturer part number: EL357N(C)(TA)-G RoHS Case style: SOIC04t/r Datasheet
In stock:
3500 pcs.
Quantity of pcs. 5+ 20+ 100+ 300+ 1000+
Net price (EUR) 0,2200 0,1203 0,0789 0,0682 0,0628
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Packaging:
3500
         
 
Item in delivery
Estimated date:
2025-04-30
Quantity of pcs.: 12000
CTR: 200-400%
Case: SOIC04
Output type: NPN Phototransistor
Insulation breakdown voltage: 3750V
Output voltage: 80V

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