FOD817A3S

Symbol Micros: OOPC817a3s FAI
Contractor Symbol:
Case : PDIP04smd
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Single-Ch CTR 80-160% Vce 70V Uiso 5,0kV NPN Phototr. DIN EN/IEC60747-5-5 opt. FOD817A3SD
Parameters
CTR: 80-160%
Case: PDIP04smd
Output type: NPN Phototransistor
Insulation breakdown voltage: 5000V
Output voltage: 70V
Manufacturer:: ON-Semicoductor Manufacturer part number: FOD817A3SD RoHS Case style: PDIP04smd Datasheet
In stock:
40 pcs.
Quantity of pcs. 2+ 15+ 100+ 300+ 1000+
Net price (EUR) 0,5589 0,3100 0,2442 0,2304 0,2231
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Packaging:
100
CTR: 80-160%
Case: PDIP04smd
Output type: NPN Phototransistor
Insulation breakdown voltage: 5000V
Output voltage: 70V

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