FOD817A3S

Symbol Micros: OOPC817a3s FAI

121233

OOPC817a3s FAI

Contractor Symbol:

Case : PDIP04smd

Datasheet

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Single-Ch CTR 80-160% Vce 70V Uiso 5,0kV NPN Phototr. DIN EN/IEC60747-5-5 opt. FOD817A3SD

Any questions? We will be happy to answer.
Write sales // micros.com.pl or call: +48 785 054 437

Parameters

CTR:	80-160%
Case:	PDIP04smd
Output type:	NPN Phototransistor
Insulation breakdown voltage:	5000V
Output voltage:	70V

All parameters

Manufacturer:: ON-Semicoductor Manufacturer part number: FOD817A3SD RoHS Case style: PDIP04smd Datasheet

In stock:

40 pcs.

Quantity of pcs.	2+	15+	100+	300+	1000+
Net price (EUR)	0,5480	0,3039	0,2395	0,2259	0,2187

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Packaging:
100 Quantity (multiple: 1)

- +

Manufacturer:: ON-Semicoductor Manufacturer part number: FOD817A3S Case style: PDIP04smd  

External warehouse:

6000 pcs.

Quantity of pcs.	2000+ (Inappropriate quantity? Ask for a different one).
Net price (EUR)	0,2187

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Packaging:
2000

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

CTR:	80-160%
Case:	PDIP04smd
Output type:	NPN Phototransistor
Insulation breakdown voltage:	5000V
Output voltage:	70V

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