FOD817B3S

Symbol Micros: OOPC817b3s FAI
Contractor Symbol:
Case : PDIP04smd
Single-Ch CTR 130-260% Vce 70V Uiso 5,0kV NPN Phototr. DIN EN/IEC60747-5-5 opt. FOD817B3SD
Parameters
CTR: 130-260%
Case: PDIP04smd
Output type: NPN Phototransistor
Insulation breakdown voltage: 5000V
Output voltage: 70V
Manufacturer:: ON-Semicoductor Manufacturer part number: FOD817B3SD RoHS Case style: PDIP04smd Datasheet
In stock:
100 pcs.
Quantity of pcs. 2+ 10+ 30+ 100+ 400+
Net price (EUR) 0,5791 0,3637 0,3015 0,2680 0,2513
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Packaging:
100
Manufacturer:: ON-Semicoductor Manufacturer part number: FOD817B3S Case style: PDIP04smd  
External warehouse:
8000 pcs.
Quantity of pcs. 2000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,2513
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Packaging:
2000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: ON-Semicoductor Manufacturer part number: FOD817B3SD Case style: PDIP04smd  
External warehouse:
27000 pcs.
Quantity of pcs. 2000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,2513
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Packaging:
1000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: Fairchild Manufacturer part number: FOD817B3SD Case style: PDIP04smd  
External warehouse:
707000 pcs.
Quantity of pcs. 2000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,2513
Add to comparison tool
Packaging:
1000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
CTR: 130-260%
Case: PDIP04smd
Output type: NPN Phototransistor
Insulation breakdown voltage: 5000V
Output voltage: 70V