FOD817B3S
Symbol Micros:
OOPC817b3s FAI
Case : PDIP04smd
Single-Ch CTR 130-260% Vce 70V Uiso 5,0kV NPN Phototr. DIN EN/IEC60747-5-5 opt. FOD817B3SD
Parameters
CTR: | 130-260% |
Case: | PDIP04smd |
Output type: | NPN Phototransistor |
Insulation breakdown voltage: | 5000V |
Output voltage: | 70V |
Manufacturer:: ON-Semicoductor
Manufacturer part number: FOD817B3SD RoHS
Case style: PDIP04smd
Datasheet
In stock:
100 pcs.
Quantity of pcs. | 2+ | 10+ | 30+ | 100+ | 400+ |
---|---|---|---|---|---|
Net price (EUR) | 0,5791 | 0,3637 | 0,3015 | 0,2680 | 0,2513 |
Manufacturer:: ON-Semicoductor
Manufacturer part number: FOD817B3S
Case style: PDIP04smd
External warehouse:
8000 pcs.
Quantity of pcs. | 2000+ (Need a significantly larger quantity? Ask for price). |
---|---|
Net price (EUR) | 0,2513 |
Manufacturer:: ON-Semicoductor
Manufacturer part number: FOD817B3SD
Case style: PDIP04smd
External warehouse:
27000 pcs.
Quantity of pcs. | 2000+ (Need a significantly larger quantity? Ask for price). |
---|---|
Net price (EUR) | 0,2513 |
Manufacturer:: Fairchild
Manufacturer part number: FOD817B3SD
Case style: PDIP04smd
External warehouse:
707000 pcs.
Quantity of pcs. | 2000+ (Need a significantly larger quantity? Ask for price). |
---|---|
Net price (EUR) | 0,2513 |
CTR: | 130-260% |
Case: | PDIP04smd |
Output type: | NPN Phototransistor |
Insulation breakdown voltage: | 5000V |
Output voltage: | 70V |
Add Symbol
Cancel
All Contractor Symbols