LTV817S-D smd

Symbol Micros: OOPC817dltvs CT
Contractor Symbol:
Case : DIP04smd
Single-Channel CTR 300-600% Vce 35V Uiso 5kV FOD817DS, LTV-817S-TA1-D
Parameters
CTR: 300-600%
Case: DIP04smd
Output type: NPN Phototransistor
Insulation breakdown voltage: 5000V
Output voltage: 35V
         
 
Item available on request
CTR: 300-600%
Case: DIP04smd
Output type: NPN Phototransistor
Insulation breakdown voltage: 5000V
Output voltage: 35V