|
Supply voltage range:
|
4.5~5.5V |
|
Case:
|
SOP08 |
|
RAM memory:
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512B |
|
Frequency:
|
1,000MHz |
|
Manufacturer:
|
Cypress |
|
Architecture:
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8-bit |
|
Operating temperature (range):
|
-40°C ~ 85°C |
|
SPI interface:
|
NO |
|
TWI (I2C) interface:
|
YES |
|
ADC:
|
NO |
|
CAN interface:
|
NO |
|
DAC:
|
NO |
|
ETHERNET interface:
|
NO |
|
Encryption:
|
NO |
|
UART/USART interface:
|
NO |
|
USB interface:
|
NO |
Detailed description
Selected properties:
- Capacity: 4Kbit;
- Organization: 8-bit;
- Serial access: 2-Wire/SPI interface;
- Interface clock frequency: 1/20MHz;
- Data retention period: min. 10 years;
- No wait for write/read operation (NoDelay™ Writes);
- Current consumption:
a) Active state: max. 200µA;
b) Standby mode: max. 10µA;
- Compatibility with EEPROM memory;
- Supply voltage: 4.5÷5.5V
- Operating temperature: -40÷85°C;
- Available in package: SOP08.
The FRAM memory is built from a ferroelectric material called PZT (a compound of lead, zirconium, and titanium), characterized by the ability to retain one of two directions of an electric field. The information is retained through the ferroelectric effect - the application of an electric field causes a permanent change in the polarization of the particles. The absence of an electric field does not change the polarization. A memory cell can be thought of as a capacitor with the ferroelectric material acting as the dielectric, alternately charged with voltage of opposite polarity. By changing the polarization of charges in such a capacitor, two stable states can be stored, corresponding to the logical states “0” and “1”.
FRAM memories are referred to as non-volatile RAM. They combine the advantages of RAM memory with the non-volatility of ROM memory. They feature fast read and write capabilities, an unlimited number of write/erase cycles, and at the same time, non-volatility of data—powering off does not cause data loss; refreshing is not necessary. FRAM memories are used in applications that require high speed, low power consumption, and data security.
