AT45DB021E-SSHN SOIC08

AT45DB021E - Serial, SPI-compatible DataFlash memory with a capacity of 2 megabits (+ additional 64 kilobits),
powered from 1.65 V.

Features:

• Single supply voltage range from 1.65 V to 3.6 V
• SPI interface compatibility
   - supports SPI modes 0 and 3
   - compatible with RapidS™
• Continuous read capability of the entire memory content
   - up to 85 MHz
   - power-saving read mode up to 15 MHz
   - maximum read time (clock-to-output, tV) 6 ns
• User-configurable page size
   - 256 bytes per page
   - 264 bytes per page (default value)
   - option for factory preset to 256-byte page size
• One SRAM data buffer (256/264 bytes)
• Flexible programming options
   - direct programming of main memory at byte or page level (from 1 to 256/264 bytes)
   - write buffering
   - page copy buffering to main memory
• Flexible erase options
   - page erase (256/264 bytes)
   - block erase (2 kB)
   - sector erase (32 kB)
   - chip erase (2 Mb)
• Advanced hardware and software data protection mechanisms
   - protection of individual sectors
   - option to lock individual sectors (switching them to read-only mode)
• 128-byte security register, programmable only once
   - 64 bytes with factory-set unique identifier
   - 64 bytes for user data
• Hardware and software reset
• Read manufacturer data and device identifier according to JEDEC standard
• Low power dissipation
   - ultra-deep sleep mode current consumption 200 nA (typical)
   - deep sleep mode current consumption 3 μA (typical)
   - standby mode current consumption 25 μA (typical at 20 MHz)
   - read current consumption 4.5 mA (typical)
• Endurance: at least 100,000 program/erase cycles per page
• Data retention: 20 years
• Industrial temperature range compatibility
• Availability of environmental variants (lead-free, halogen-free, RoHS compliant)
   - 8-pin SOIC package (0.150ʺ width, 0.208" length)
   - 8-pin ultra-thin DFN package (5 x 6 x 0.6 mm)
   - 9-ball ultra-thin UBGA package (6 x 6 x 0.6 mm)

Description

Adesto® AT45DB021E is a serial sequential access Flash memory, powered by a voltage as low as 1.65 V. It is an ideal choice for a wide range of devices requiring the storage of voice, images, program code, or data. AT45DB021E is also compatible with the RapidS serial interface, which is crucial for applications requiring very high-speed operation. 2,162,688 bits of memory are divided into 1024 pages, each consisting of 256 or 264 bytes. In addition to the main memory, AT45DB021E also includes one SRAM buffer with a capacity of 256/264 bytes. This buffer can serve as additional page memory, and with a three-step process in read-modify-write system, it allows for easy emulation of EEPROM memory, providing access to contents at the bit or byte level. Unlike traditional Flash memories with random access, which feature multiple address lines and a parallel interface, Adesto DataFlash® memories use a serial interface and sequential access.

Its simplicity drastically reduces the number of necessary pins, eases trace layout design, increases system reliability, limits EMI interference, and allows the memory to be placed in a small package. The device has been optimized for use in various commercial and industrial solutions where high component density, a small number of pins, low supply voltage, and low power consumption are most important.

AT45DB021E does not require high-voltage programming, allowing quick reprogramming of memory in the system. Erasing, programming, and reading take place with a supply voltage in the range from 1.65 V to 3.6 V. The AT45DB021E is activated via the Chip Select (CS) pin, and is accessed using the three-wire interface: Serial Input (SI), Serial Output (SO), and Serial Clock (SCK). The correct timing of all programming and erase operations is handled automatically.