AT45DB041E-MHN UDFN8(5x6x0.6mm)

AT45DB041E – a serial DataFlash memory compatible with SPI, with a capacity of 4 megabits (+ an additional 128 kilobits), powered from 1.65 V.

Features:

• Single supply voltage from 1.65 V to 3.6 V
• SPI interface compatibility
  – supports SPI modes 0 and 3
  – compatibility with RapidS™
• Continuous memory content reading capability
  – up to 85 MHz
  – low-power read mode up to 15 MHz
  – maximum read time (clock-to-output, tV) of 6 ns
• User-configurable page size
  – 256 bytes per page
  – 264 bytes per page (default value)
  – option for factory pre-configuration of page size to 256 bytes
• One SRAM data buffer (256/264 bytes)
• Flexible programming capabilities
  – direct programming of main memory at the byte or page level (from 1 to 256/264 bytes)
  – write buffering
  – page copy buffering to main memory
• Flexible erasure options
  – page erasure (256/264 bytes)
  – block erasure (2 kB)
  – sector erasure (64 kB)
  – chip erasure (4 Mb)
• Advanced hardware and software data protection mechanisms
  – sector-level protection
  – ability to lock individual sectors (set them to read-only mode)
• A 128-byte security register that can be programmed only once
  – 64 bytes with a factory-set unique identifier
  – 64 bytes for user data
• Hardware and software reset
• Manufacturer data and device identifier read according to JEDEC standard
• Low power dissipation
  – ultra-deep power-down current consumption of 400 nA (typical)
  – deep power-down current consumption of 3 µA (typical)
  – standby current consumption of 25 µA (typically at 20 MHz)
  – read current consumption of 11 mA (typically)
• Endurance: at least 100,000 program/erase cycles per page
• Data retention: 20 years
• Industrial temperature range compatibility
• Availability of environmentally friendly (lead-free, halogen-free, RoHS-compliant) variants
  – 8-pin SOIC package (width 0.150”, length 0.208”)
  – 8-pad ultra-thin DFN package (5 x 6 x 0.6 mm)

Description

Adesto® AT45DB041E is a serial Flash memory with sequential access, powered from 1.65 V. It is an ideal choice for a wide range of devices that need to store voice, images, program code, or data. AT45DB041E is also compatible with the RapidS serial interface, which is crucial for applications requiring extremely high speed. The 4,194,304 bits of memory are divided into 2,048 pages, each consisting of 256 or 264 bytes. In addition to the main memory, AT45DB041E also includes an SRAM buffer with a capacity of 256/264 bytes. This can serve as additional page memory, and its three-stage operation (read-modify-write system) allows for easy emulation of EEPROM memory, providing access to individual bits or bytes. Unlike traditional Flash memories with random access, equipped with multiple address lines and parallel interfaces, Adesto DataFlash® memories use a serial interface and sequential access.

Its simplicity results in a drastic reduction in the number of necessary pins, facilitates track design, increases system reliability, reduces EMI interference, and enables the memory to be placed in a small package. The device is optimized for use in many commercial and industrial solutions where high component density, few pins, low supply voltage, and low power consumption are the most important factors.

AT45DB041E does not require high-voltage programming, which allows for quick in-system reprogramming. Erasing, programming, and reading occur within a supply voltage range of 1.65 V to 3.6 V. The memory AT45DB041E is activated via the Chip Select (CS) pin and accessed using a three-wire interface: Serial Input (SI), Serial Output (SO), and Serial Clock (SCK). The appropriate timing for all programming and erasure operations is handled automatically.