AT45DB041E-SHN SOIC8(0.208")

AT45DB041E - Serial, SPI-compatible DataFlash memory with a capacity of 4 megabits (+ additional 128 kilobits),
powered from 1.65 V.

Features:

• Single supply voltage range from 1.65 V – 3.6 V
• SPI interface compatibility
   - Supports SPI modes 0 and 3
   - Compatibility with RapidS™
• Ability to read the entire memory contents in continuous mode
   - Up to 85 MHz
   - Low-power read mode up to 15 MHz
   - Maximum read time (clock-to-output, tV) 6 ns
• User-selectable page size
   - 256 bytes per page
   - 264 bytes per page (default value)
   - Option to factory preset the page size to 256 bytes
• Single SRAM data buffer (256/264 bytes)
• Flexible programming capabilities
   - Direct programming of main memory at the byte or page level (from 1 to 256/264 bytes)
   - Write buffering
   - Buffering of page copy to main memory
• Flexible erase options
   - Page erase (256/264 bytes)
   - Block erase (2 kB)
   - Sector erase (64 kB)
   - Chip erase (4 Mb)
• Advanced hardware and software data protection mechanisms
   - Protection of individual sectors
   - Ability to lock individual sectors (switching them to read-only mode)
• 128-byte security register that can be programmed only once
   - 64 bytes with a factory-assigned unique identifier
   - 64 bytes for user data
• Hardware and software reset
• Manufacturer and device ID read according to the JEDEC standard
• Low power dissipation
   - Ultra-deep power-down mode current of 400 nA (typical)
   - Deep power-down mode current of 3 μA (typical)
   - Standby mode current of 25 μA (typical at 20 MHz)
   - Read mode current of 11 mA (typical)
• Endurance: at least 100,000 program/erase cycles per page
• Data retention: 20 years
• Industrial operating temperature range compatibility
• Availability of eco-friendly (lead-free, halogen-free, RoHS-compliant) versions
   - 8-pin SOIC package (width 0.150ʺ, length 0.208")
   - 8-pin ultra-thin DFN package (5 x 6 x 0.6 mm)

Description

Adesto® AT45DB041E is a serial flash memory with sequential access, powered from 1.65 V. It is an ideal choice for a wide range of devices where there is a need to store voice, images, program code, or data. AT45DB041E is also compatible with the RapidS serial interface, which is important for applications requiring very high-speed performance. The 4,194,304 bits of memory are divided into 2,048 pages, each containing 256 or 264 bytes. In addition to the main memory, AT45DB041E also features an SRAM buffer with a capacity of 256/264 bytes. This buffer can serve as additional page memory, and thanks to the three-phase operation, read-modify-write system, it enables easy implementation of EEPROM emulation, providing access to the contents at the bit or byte level. Unlike traditional free-access Flash memories with multiple address lines and parallel interfaces, Adesto DataFlash® memories employ a serial interface with sequential access.

Its simplicity leads to a drastic reduction in the number of required pins, simplifies routing design, increases system reliability, reduces EMI interference, and allows the memory to be placed in a small package. The device has been optimized for use in a variety of commercial and industrial solutions where high component density, a small number of pins, low supply voltage, and low energy consumption are most important.

AT45DB041E does not require high-voltage programming, allowing for quick in-system reprogramming of the memory. Erasing, programming, and reading take place at a supply voltage between 1.65 V and 3.6 V. The memory is activated through the Chip Select (CS) pin and accessed using a three-wire interface: Serial Input (SI), Serial Output (SO), and Serial Clock (SCK). The appropriate timing for all programming and erase operations is managed automatically.