AT45DB081E-SHN SO8(0.209")

AT45DB081E - serial SPI-compatible DataFlash memory with a capacity of 8 megabits (+ additional 256 kilobits),
powered by as low as 1.7 V.

Features:

• Single supply voltage range from 1.7 V – 3.6 V
• SPI interface compatibility
   - supports SPI modes 0 and 3
   - compatibility with RapidS™
• Ability to read the entire memory content in continuous mode
   - up to 133 MHz
   - power-saving read mode up to 20 MHz
   - maximum read time (clock-to-output, tV) 6 ns
• User-configurable page size
   - 256 bytes per page
   - 264 bytes per page (default value)
   - ability to pre-set the page size to 256 bytes at the factory
• One SRAM data buffer (256/264 bytes)
• Flexible programming options
   - direct programming of the main memory at the byte or page level (from 1 to 256/264 bytes)
   - write buffering
   - page copy buffering to main memory
• Flexible erase options
   - page erase (256/264 bytes)
   - block erase (2 kB)
   - sector erase (64 kB)
   - chip erase (8 Mb)
• Advanced hardware and software data protection mechanisms
   - protection of individual sectors
   - ability to lock individual sectors (set to read-only mode)
• Security register of 128 bytes, which can be programmed only once
   - 64 bytes with a factory-programmed unique identifier
   - 64 bytes for user data
• Hardware and software reset
• Manufacturer and device identifier readout compliant with the JEDEC standard
• Low power consumption
   - ultra-deep sleep current 400 nA (typical)
   - deep sleep current 4.5 μA (typical)
   - standby current 25 μA (typical at 20 MHz)
   - read current 8 mA (typical)
• Endurance: at least 100,000 program/erase cycles per page
• Data retention: 20 years
• Compliance with industrial operating temperature range
• Availability of eco-friendly variants (lead-free, halogen-free, RoHS compliant)
   - 8-pin SOIC package (0.150" width, 0.208" length)
   - 8-pin ultra-thin DFN package (5 x 6 x 0.6 mm)

Description

Adesto® AT45DB081E is a serial flash memory with sequential access, powered by a voltage range starting from 1.7 V. It is an ideal choice for a wide range of applications that require storing voice, images, program code, or data. AT45DB081E is also compatible with the RapidS serial interface, which is important for applications that require very high-speed performance. The 8,650,752 bits of memory are divided into 4,096 pages, with each page consisting of 256 or 264 bytes. In addition to the main memory, AT45DB081E also includes one SRAM buffer with a capacity of 256/264 bytes. This buffer can be used as additional paging memory, and thanks to its three-step operation (read-modify-write), it allows easy EEPROM emulation, providing access at the bit or byte level. Unlike traditional flash memories with random access and parallel interfaces, Adesto DataFlash® memories use a serial interface with sequential access.

Its simplicity results in a drastic reduction in the number of pins required, facilitating easier PCB design, increasing system reliability, reducing EMI interference, and allowing the memory to be housed in a compact package. The device has been optimized for use in various commercial and industrial applications where high component density, fewer pins, low supply voltage, and low power consumption are essential.

AT45DB081E does not require high-voltage programming, allowing for quick reprogramming of the memory in-circuit. Erasing and programming, as well as reading, are carried out with supply voltages ranging from 1.7 V to 3.6 V. The memory is activated via the Chip Select (CS) pin and accessed using a three-wire interface: Serial Input (SI), Serial Output (SO), and Serial Clock (SCK). The timing control for all programming and erasing operations is handled automatically.