FM24C16B-G

Selected features:

- capacity: 16 Kbit;
- organization: 8-bit;
- serial access: 2-Wire/SPI interface;
- interface clock frequency: 1/20 MHz;
- data retention in memory: min. 10 years;
- no delay for write/read operations (NoDelay™ Writes);
- current consumption:
a) in active state: max. 200 µA;
b) in standby mode: max. 10 µA;
- compatibility with EEPROM memory;
- supply voltage: 4.5÷5.5 V
- operating temperature: -40÷85°C;
- available in package: SOP08.

FRAM Memory is built from a ferroelectric material called PZT (lead zirconate titanate), which has the ability to retain one of the two directions of the electric field. The memory utilizes the ferroelectric effect—under the influence of an electric field, a permanent change in the polarization of the molecules occurs. The absence of the electric field does not cause any change in the polarization. You can imagine the memory cell as a capacitor with a ferroelectric material as the dielectric, charged alternately with voltage of opposite polarity. By changing the charge polarization in such a capacitor, two stable states, corresponding to logic states "0" and "1", can be remembered.

FRAM memories are known as non-volatile RAM. They combine the advantages of random access RAM memory and read-only memory (ROM). They are characterized by fast read and write capabilities, an unlimited number of write/erase cycles, and data non-volatility—disconnecting the power supply does not result in data loss; refreshing information is not necessary. FRAM memories are used where high-speed operation, low power consumption, and data security are required.