FM25040B-G
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| Supply voltage range: | 4.5~5.5V |
| Case: | SOP08 |
| RAM memory: | 512B |
| Frequency: | 20,000MHz |
| Manufacturer: | Ramtron |
| Architecture: | 8-bit |
| Operating temperature (range): | -40°C ~ 85°C |
| Quantity of pcs. | 1+ | 3+ | 10+ | 50+ | 200+ |
|---|---|---|---|---|---|
| Net price (EUR) | 1,7319 | 1,3827 | 1,1831 | 1,0620 | 1,0192 |
| Quantity of pcs. | 2500+ (Need a significantly larger quantity? Ask for price). |
|---|---|
| Net price (EUR) | 1,0192 |
| Quantity of pcs. | 97+ (Need a significantly larger quantity? Ask for price). |
|---|---|
| Net price (EUR) | 1,0192 |
| Quantity of pcs. | 5+ (Need a significantly larger quantity? Ask for price). |
|---|---|
| Net price (EUR) | 1,0192 |
| Supply voltage range: | 4.5~5.5V |
| Case: | SOP08 |
| RAM memory: | 512B |
| Frequency: | 20,000MHz |
| Manufacturer: | Ramtron |
| Architecture: | 8-bit |
| Operating temperature (range): | -40°C ~ 85°C |
| SPI interface: | YES |
| TWI (I2C) interface: | NO |
| ADC: | NO |
| CAN interface: | NO |
| DAC: | NO |
| ETHERNET interface: | NO |
| Encryption: | NO |
| UART/USART interface: | NO |
| USB interface: | NO |
Selected features:
- capacity: 4 Kbit;
- organization: 8-bit;
- serial access: 2-Wire/SPI interface;
- interface clock frequency: 1/20 MHz;
- data retention in memory: min. 10 years;
- no delay for write/read operations (NoDelay™ Writes);
- current consumption:
a) in active state: max. 200 µA;
b) in standby mode: max. 10 µA;
- compatibility with EEPROM memory;
- supply voltage: 4.5÷5.5 V;
- operating temperature: -40÷85°C;
- available in package: SOP08.
FRAM memory is made from a ferroelectric material called PZT (lead zirconate titanate), which has the ability to remember one of the two directions of the electric field. The information storage uses the ferroelectric effect – when an electric field is applied, a permanent change in the polarization of the molecules occurs. The absence of the electric field does not cause any change in polarization. You can imagine the memory cell as a capacitor with a ferroelectric material as the dielectric, charged alternately with voltage of opposite polarity. By changing the polarization of charges in such a capacitor, two stable states corresponding to the logical states "0" and "1" can be stored.
FRAM memories are known as non-volatile RAM. They combine the benefits of RAM with random access and read-only memory (ROM). They are characterized by fast read and write speeds, an unlimited number of write/erase cycles, and data non-volatility – disconnecting the power supply does not cause the stored information to be lost; refreshing the data is not necessary. FRAM memories are used where high-speed operation, low power consumption, and data security are required.