FM25W256-GTR
| Supply voltage range: | 2.7~5.5V |
| Case: | SOP08 |
| RAM memory: | 32kB |
| Frequency: | 20,000MHz |
| Manufacturer: | Ramtron |
| Architecture: | 8-bit |
| Operating temperature (range): | -40°C ~ 85°C |
| Quantity of pcs. | 1+ | 3+ | 10+ | 30+ | 100+ |
|---|---|---|---|---|---|
| Net price (EUR) | 5,1307 | 4,5617 | 4,2188 | 4,0486 | 3,9460 |
| Quantity of pcs. | 1+ (Need a significantly larger quantity? Ask for price). |
|---|---|
| Net price (EUR) | 3,9460 |
| Quantity of pcs. | 1+ (Need a significantly larger quantity? Ask for price). |
|---|---|
| Net price (EUR) | 3,9460 |
| Supply voltage range: | 2.7~5.5V |
| Case: | SOP08 |
| RAM memory: | 32kB |
| Frequency: | 20,000MHz |
| Manufacturer: | Ramtron |
| Architecture: | 8-bit |
| Operating temperature (range): | -40°C ~ 85°C |
| SPI interface: | YES |
| TWI (I2C) interface: | NO |
| ADC: | NO |
| CAN interface: | NO |
| DAC: | NO |
| ETHERNET interface: | NO |
| Encryption: | NO |
| UART/USART interface: | NO |
| USB interface: | NO |
Selected Features:
- Capacity: 256 Kbit;
- Organization: 8-bit;
- Serial Access: 2-Wire/SPI interface;
- Interface Clock Frequency: 1/20 MHz;
- Data Retention Period: min. 10 years;
- No waiting for write/read operations (NoDelay™ Writes);
- Current Consumption:
a) In active mode: max. 200 µA;
b) In standby mode: max. 10 µA;
- Compatibility with EEPROM memory;
- Supply Voltage: 2.7~5.5 V;
- Operating Temperature: -40 ÷ 85 °C;
- Available in package: SOP08.
FRAM memory is built from a ferroelectric material called PZT (a compound of lead, zirconium, and titanium), which features the ability to store one of two directions of an electric field. The ferroelectric effect is utilized for information storage—when an electric field is applied, it causes a permanent change in particle polarization. The absence of an electric field does not alter the polarization. A memory cell can be imagined as a capacitor with ferroelectric material as its dielectric, alternately charged with voltage of opposite polarity. By changing the charge polarization in such a capacitor, two stable states corresponding to logical states "0" and "1" can be stored.
FRAM memories are referred to as non-volatile RAM. They combine the advantages of random-access memory (RAM) and read-only memory (ROM). They feature fast read and write operations, virtually unlimited write/erase cycles, and data non-volatility—disconnection of the power supply does not result in the loss of stored information, and data refreshing is not required. FRAM memories are used where high speed, low power consumption, and data security are required.