K6R4016V1D-KI10
| Case: | SOJ44 |
| Supply voltage range: | 3.0~3.6V |
| RAM memory: | 256kB |
| Manufacturer: | SAMSUNG |
| Architecture: | 16-bit |
| ADC: | NO |
| ETHERNET interface: | NO |
| Case: | SOJ44 |
| Supply voltage range: | 3.0~3.6V |
| RAM memory: | 256kB |
| Manufacturer: | SAMSUNG |
| Architecture: | 16-bit |
| ADC: | NO |
| ETHERNET interface: | NO |
| Operating temperature (range): | -40°C ~ 85°C |
| SPI interface: | NO |
| TWI (I2C) interface: | NO |
| UART/USART interface: | NO |
| CAN interface: | NO |
| DAC: | NO |
| Encryption: | NO |
| USB interface: | NO |
K6R4016V1D-KI10 - SRAM memory made using CMOS technology. Information is input and output from memory asynchronously in 16-bit word format. The memory operating mode is selected using the following signals: Chip Select (~CS, memory activation), Write Enable (~WE, write activation), Output Enable (~OE, read activation).
Selected Properties:
- Capacity: 4Mbit;
- Organization: 16-bit;
- Access time: 10ns;
- Input / Output compatible with TTL;
- Tri-state outputs – allows connection of multiple memory chips;
- Power consumption:
Active mode: 75mA max;
Standby mode: 20mA max (TTL), 5mA max (CMOS);
- Supply voltage: 3.3V;
- Operating temperature: -40÷85°C;
This memory is used in applications where high data density and fast processing speed are required.