|
Case:
|
TSOP2-44 |
|
Supply voltage range:
|
3.0~3.6V |
|
RAM memory:
|
256kB |
|
Manufacturer:
|
ISSI |
|
Architecture:
|
16-bit |
|
ADC:
|
NO |
|
ETHERNET interface:
|
NO |
|
Operating temperature (range):
|
-40°C ~ 85°C |
|
SPI interface:
|
NO |
|
TWI (I2C) interface:
|
NO |
|
UART/USART interface:
|
NO |
|
CAN interface:
|
NO |
|
DAC:
|
NO |
|
Encryption:
|
NO |
|
USB interface:
|
NO |
Detailed description
IS61WV25616BLL-10TLI - SRAM memory manufactured using CMOS technology. Data is stored and retrieved asynchronously in the form of 16-bit words. The memory operating mode is selected using the following signals: Chip Enable (~CE, memory activation), Write Enable (~WE, write activation), Output Enable (~OE, read activation).
Selected Features:
- Capacity: 4Mbit;
- Organization: 16-bit;
- Access time: 10ns;
- TTL-compatible inputs/outputs;
- Three-state outputs – allowing multiple memory chips to be connected together;
- Power consumption:
Active mode: 45mA max;
Standby mode: 15mA max (TTL), 9mA max (CMOS);
- Supply voltage: 3.3V;
- Operating temperature: -40÷85°C;
This memory is used in applications requiring high data storage density and fast processing speed.
