CY7C1049GN30-10VXI
| Case: | SOJ36 |
| Supply voltage range: | 2,2~3,6V |
| RAM memory: | 512kB |
| Manufacturer: | Cypress |
| Architecture: | 8-bit |
| ADC: | NO |
| ETHERNET interface: | NO |
| Quantity of pcs. | 1+ | 4+ | 12+ | 36+ | 120+ |
|---|---|---|---|---|---|
| Net price (EUR) | 3,6439 | 3,1697 | 2,9766 | 2,8670 | 2,8027 |
| Quantity of pcs. | 1+ | 5+ | 20+ | 100+ | 200+ |
|---|---|---|---|---|---|
| Net price (EUR) | 3,6344 | 3,1244 | 2,9266 | 2,8194 | 2,7955 |
| Case: | SOJ36 |
| Supply voltage range: | 2,2~3,6V |
| RAM memory: | 512kB |
| Manufacturer: | Cypress |
| Architecture: | 8-bit |
| ADC: | NO |
| ETHERNET interface: | NO |
| Operating temperature (range): | -40°C ~ 85°C |
| SPI interface: | NO |
| TWI (I2C) interface: | NO |
| UART/USART interface: | NO |
| CAN interface: | NO |
| DAC: | NO |
| Encryption: | NO |
| USB interface: | NO |
K6R4008V1D-KI10 - SRAM memory manufactured using CMOS technology. Data is stored and retrieved asynchronously in the form of 8-bit words. The memory operating mode is selected using the following signals: Chip Select (~CS, memory activation), Write Enable (~WE, write activation), Output Enable (~OE, read activation).
Selected Features:
- Capacity: 4Mbit;
- Organization: 8-bit;
- Access time: 10ns;
- TTL-compatible inputs/outputs;
- Three-state outputs – allowing multiple memory chips to be connected together;
- Power consumption:
Active mode: 75mA max;
Standby mode: 20mA max (TTL), 5mA max (CMOS);
- Supply voltage: 3.3V;
- Operating temperature: -40÷85°C;
This memory is used in applications requiring high data storage density and fast processing speed.