SI2308BDS 

Symbol Micros: TSI2308bds
Contractor Symbol:
Case : SOT23
Technical drawing Add to favourites
Transistor N-MOSFET; 60V; 20V; 192mOhm; 2,3A; 1,66W; -55°C~150°C; Substitute: SI2308BDS-T1-GE3; SI2308BDS-T1-E3; SI2308BDS-T1-GE3CT-ND;
Parameters
Open channel resistance: 192mOhm
Max. drain current: 2,3A
Max. power loss: 1,66W
Case: SOT23
Manufacturer: VISHAY
Max. drain-source voltage: 60V
Transistor type: N-MOSFET
Manufacturer:: Vishay Manufacturer part number: SI2308BDS-T1-GE3 Case style: SOT23  
External warehouse:
18000 pcs.
Quantity of pcs. 3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,1194
Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: - Manufacturer part number: SI2308BDS-T1-E3 Case style: SOT23  
External warehouse:
9000 pcs.
Quantity of pcs. 1+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,1127
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Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 192mOhm
Max. drain current: 2,3A
Max. power loss: 1,66W
Case: SOT23
Manufacturer: VISHAY
Max. drain-source voltage: 60V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD

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