10N65

Symbol Micros: T10N65F LGE

370925

T10N65F LGE

Contractor Symbol:

Case : TO220iso

Datasheet

Technical drawing Add to favourites

Transistor N-Channel MOSFET; Unipolar; 650V; 10A; 0,63Ohm; 27.5W; -55°C ~ 150°C; Substitute: 10N65-LGE;

Parameters

Open channel resistance:	630mOhm
Max. drain current:	40A
Case:	TO220iso
Manufacturer:	LGE
Max. drain-source voltage:	650V
Max. drain-gate voltage:	4V
Transistor type:	MOSFET

All parameters

Manufacturer:: LGE Manufacturer part number: 10N65 RoHS Case style: TO-220F Datasheet

In stock:

50 pcs.

Quantity of pcs.	2+	10+	50+	100+	400+
Net price (EUR)	0,7197	0,4525	0,3538	0,3346	0,3129

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Packaging:
50/100 Quantity (multiple: 1)

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Item in delivery

Estimated date:
2025-05-20

Quantity of pcs.: 300

• Parameters

Open channel resistance:	630mOhm
Max. drain current:	40A
Case:	TO220iso
Manufacturer:	LGE
Max. drain-source voltage:	650V
Max. drain-gate voltage:	4V
Transistor type:	MOSFET
Max. gate-source Voltage:	30V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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