10N65

Symbol Micros: T10N65F LGE
Contractor Symbol:
Case : TO220iso
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Transistor N-Channel MOSFET; Unipolar; 650V; 10A; 0,63Ohm; 27.5W; -55°C ~ 150°C; Substitute: 10N65-LGE;
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Parameters
Open channel resistance: 630mOhm
Max. drain current: 40A
Case: TO220iso
Manufacturer: LGE
Max. drain-source voltage: 650V
Max. drain-gate voltage: 4V
Transistor type: MOSFET
Manufacturer:: LGE Manufacturer part number: 10N65 RoHS Case style: TO220iso Datasheet
In stock:
100 pcs.
Quantity of pcs. 2+ 10+ 50+ 100+ 400+
Net price (EUR) 0,7781 0,4884 0,3832 0,3622 0,3388
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Packaging:
50/100
Open channel resistance: 630mOhm
Max. drain current: 40A
Case: TO220iso
Manufacturer: LGE
Max. drain-source voltage: 650V
Max. drain-gate voltage: 4V
Transistor type: MOSFET
Max. gate-source Voltage: 30V
Operating temperature (range): -55°C ~ 150°C
Mounting: THT

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