2N7000

Symbol Micros: T2N7000
Contractor Symbol:
Case : TO92
Tranzystor N-Channel MOSFET; 60V; 60V; 20V; 9Ohm; 200mA; 400mW; -55°C ~ 150°C; Odpowiednik: 2N7000BU (bulk); 2N7000-G; 2N7000-D26Z; 2N7000TA;
Parameters
Open channel resistance: 9Ohm
Max. drain current: 200mA
Max. power loss: 400mW
Case: TO92
Manufacturer: ON SEMICONDUCTOR
Max. drain-source voltage: 60V
Max. drain-gate voltage: 60V
Manufacturer:: ON-Semicoductor Manufacturer part number: 2N7000BU RoHS Case style: TO92bul  
In stock:
350 pcs.
Quantity of pcs. 3+ 20+ 100+ 300+ 1000+
Net price (EUR) 0,2560 0,1359 0,1053 0,0972 0,0931
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Packaging:
1000/2000
Manufacturer:: ON-Semicoductor Manufacturer part number: 2N7000TA Case style: TO92  
External warehouse:
45000 pcs.
Quantity of pcs. 2000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,0931
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Packaging:
2000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: ON-Semicoductor Manufacturer part number: 2N7000TA Case style: TO92  
External warehouse:
10000 pcs.
Quantity of pcs. 2000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,0931
Add to comparison tool
Packaging:
2000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: ON-Semicoductor Manufacturer part number: 2N7000-D26Z Case style: TO92  
External warehouse:
16000 pcs.
Quantity of pcs. 2000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,0931
Add to comparison tool
Packaging:
2000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 9Ohm
Max. drain current: 200mA
Max. power loss: 400mW
Case: TO92
Manufacturer: ON SEMICONDUCTOR
Max. drain-source voltage: 60V
Max. drain-gate voltage: 60V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: THT