2N7000 TO92(ammo, formed PIN) LGE
Symbol Micros:
T2N7000 f
Case : TO92ammoformed
N-MOSFET 190mA 60V 250mW
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Write sales // micros.com.pl or call: +48 785 054 437
Parameters
| Open channel resistance: | 5,3Ohm |
| Max. drain current: | 200mA |
| Max. power loss: | 400mW |
| Case: | TO92ammoformed |
| Max. drain-source voltage: | 60V |
| Max. drain-gate voltage: | 60V |
| Transistor type: | N-MOSFET |
Manufacturer:: LGE
Manufacturer part number: 2N7000 RoHS
Case style: TO92bul
In stock:
6670 pcs.
| Quantity of pcs. | 5+ | 30+ | 200+ | 1000+ | 5000+ |
|---|---|---|---|---|---|
| Net price (EUR) | 0,1517 | 0,0608 | 0,0353 | 0,0295 | 0,0276 |
| Open channel resistance: | 5,3Ohm |
| Max. drain current: | 200mA |
| Max. power loss: | 400mW |
| Case: | TO92ammoformed |
| Max. drain-source voltage: | 60V |
| Max. drain-gate voltage: | 60V |
| Transistor type: | N-MOSFET |
| Max. gate-source Voltage: | 20V |
| Operating temperature (range): | -55°C ~ 150°C |
| Mounting: | THT |
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