2N7000

Symbol Micros: T2N7000 LGE

116955

T2N7000 LGE

Contractor Symbol:

Case : TO92

Datasheet

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Transistor N-Channel MOSFET; 60V; 6Ohm; 200mA; 350mW; -55°C ~ 150°C; 2N7000-LGE;

Parameters

Open channel resistance:	6Ohm
Max. drain current:	200mA
Max. power loss:	350mW
Case:	TO92
Manufacturer:	LGE
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: LGE Manufacturer part number: 2N7000 RoHS Case style: TO92bul Datasheet

In stock:

1500 pcs.

Quantity of pcs.	5+	30+	200+	1000+	2000+
Net price (EUR)	0,1579	0,0625	0,0359	0,0299	0,0287

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Packaging:
1000/2000 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	6Ohm
Max. drain current:	200mA
Max. power loss:	350mW
Case:	TO92
Manufacturer:	LGE
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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