2N7000

Symbol Micros: T2N7000 LGE

116955

T2N7000 LGE

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Case : TO92

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Transistor N-Channel MOSFET; 60V; 6Ohm; 200mA; 350mW; -55°C ~ 150°C; 2N7000-LGE;

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Parameters

Open channel resistance:	6Ohm
Max. drain current:	200mA
Max. power loss:	350mW
Case:	TO92
Manufacturer:	LGE
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	6Ohm
Max. drain current:	200mA
Max. power loss:	350mW
Case:	TO92
Manufacturer:	LGE
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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