2N7002BKS,115

Symbol Micros: T2N7002bks
Contractor Symbol:
Case : SOT363
2xN-MOSFET 60V 0.3A 2N7002BKS,115
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Parameters
Open channel resistance: 2Ohm
Max. drain current: 300mA
Max. power loss: 340mW
Case: SOT363
Manufacturer: NXP
Max. drain-source voltage: 60V
Transistor type: 2xN-MOSFET
Manufacturer:: NXP Manufacturer part number: 2N7002BKS,115 RoHS Case style: SOT363 t/r Datasheet
In stock:
1720 pcs.
Quantity of pcs. 5+ 20+ 100+ 500+ 3000+
Net price (EUR) 0,2408 0,1216 0,0737 0,0585 0,0533
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Packaging:
3000
Open channel resistance: 2Ohm
Max. drain current: 300mA
Max. power loss: 340mW
Case: SOT363
Manufacturer: NXP
Max. drain-source voltage: 60V
Transistor type: 2xN-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD