2N7002ET1G
Symbol Micros:
T2N7002et1g
Case : SOT23-3
N-MOSFET 60V 260mA
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Write sales // micros.com.pl or call: +48 785 054 437
Write sales // micros.com.pl or call: +48 785 054 437
Parameters
Open channel resistance: | 3Ohm |
Max. drain current: | 310mA |
Max. power loss: | 420mW |
Case: | SOT23-3 |
Manufacturer: | ON SEMICONDUCTOR |
Max. drain-source voltage: | 60V |
Transistor type: | N-MOSFET |
Open channel resistance: | 3Ohm |
Max. drain current: | 310mA |
Max. power loss: | 420mW |
Case: | SOT23-3 |
Manufacturer: | ON SEMICONDUCTOR |
Max. drain-source voltage: | 60V |
Transistor type: | N-MOSFET |
Max. gate-source Voltage: | 20V |
Operating temperature (range): | -55°C ~ 150°C |
Mounting: | SMD |
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