2N7002KT1GE3
Symbol Micros:
T2N7002kt1ge3
Case : SOT23
N-MOSFET 60V 0.38A
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Write sales // micros.com.pl or call: +48 785 054 437
Parameters
Open channel resistance: | 4Ohm |
Max. drain current: | 300mA |
Max. power loss: | 350mW |
Case: | SOT23 |
Manufacturer: | VISHAY |
Max. drain-source voltage: | 60V |
Transistor type: | N-MOSFET |
Manufacturer:: ON-Semicoductor
Manufacturer part number: 2N7002KT1G RoHS
Case style: SOT23t/r
In stock:
980 pcs.
Quantity of pcs. | 5+ | 20+ | 100+ | 500+ | 3000+ |
---|---|---|---|---|---|
Net price (EUR) | 0,2243 | 0,1066 | 0,0600 | 0,0455 | 0,0408 |
Manufacturer:: ON-Semicoductor
Manufacturer part number: 2N7002KT1G RoHS
Case style: SOT23-3 t/r
In stock:
400 pcs.
Quantity of pcs. | 5+ | 20+ | 100+ | 500+ | 3000+ |
---|---|---|---|---|---|
Net price (EUR) | 0,2243 | 0,1066 | 0,0600 | 0,0455 | 0,0408 |
Open channel resistance: | 4Ohm |
Max. drain current: | 300mA |
Max. power loss: | 350mW |
Case: | SOT23 |
Manufacturer: | VISHAY |
Max. drain-source voltage: | 60V |
Transistor type: | N-MOSFET |
Max. gate-source Voltage: | 20V |
Operating temperature (range): | -55°C ~ 150°C |
Mounting: | SMD |
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