2N7002KT1GE3

Symbol Micros: T2N7002kt1ge3
Contractor Symbol:
Case : SOT23
N-MOSFET 60V 0.38A
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Parameters
Open channel resistance: 4Ohm
Max. drain current: 300mA
Max. power loss: 350mW
Case: SOT23
Manufacturer: VISHAY
Max. drain-source voltage: 60V
Transistor type: N-MOSFET
Manufacturer:: ON-Semicoductor Manufacturer part number: 2N7002KT1G RoHS Case style: SOT23t/r  
In stock:
980 pcs.
Quantity of pcs. 5+ 20+ 100+ 500+ 3000+
Net price (EUR) 0,2243 0,1066 0,0600 0,0455 0,0408
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Packaging:
3000
Manufacturer:: ON-Semicoductor Manufacturer part number: 2N7002KT1G RoHS Case style: SOT23-3 t/r  
In stock:
400 pcs.
Quantity of pcs. 5+ 20+ 100+ 500+ 3000+
Net price (EUR) 0,2243 0,1066 0,0600 0,0455 0,0408
Add to comparison tool
Packaging:
3000
Open channel resistance: 4Ohm
Max. drain current: 300mA
Max. power loss: 350mW
Case: SOT23
Manufacturer: VISHAY
Max. drain-source voltage: 60V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD