2N7002W

Symbol Micros: T2N7002W LGE
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Case : SOT323
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Transistor N-Channel MOSFET; unipolar; 60V; 50V; 7,5Ohm; 115mA; 225mW; -55°C ~ 150°C; Substitute: 2N7002W-LGE;
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Parameters
Open channel resistance: 7,5Ohm
Max. drain current: 115mA
Max. power loss: 225mW
Case: SOT323
Manufacturer: LGE
Max. drain-source voltage: 60V
Max. drain-gate voltage: 60V
Manufacturer:: LGE Manufacturer part number: 2N7002W RoHS Case style: SOT323 t/r Datasheet
In stock:
3000 pcs.
Quantity of pcs. 5+ 20+ 100+ 500+ 3000+
Net price (EUR) 0,1327 0,0609 0,0330 0,0248 0,0221
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Packaging:
3000
Open channel resistance: 7,5Ohm
Max. drain current: 115mA
Max. power loss: 225mW
Case: SOT323
Manufacturer: LGE
Max. drain-source voltage: 60V
Max. drain-gate voltage: 60V
Transistor type: MOSFET
Max. gate-source Voltage: 25V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD

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