AOD4130

Symbol Micros: TAOD4130 c

405663

TAOD4130  c

Contractor Symbol:

Case : TO252 (DPACK) t/r

Datasheet

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Transistor N-Channel MOSFET; 60V; 20V; 38mOhm; 30A; 34,7W; -55°C~150°C; AOD4130; AOD4130-HXY; AOD4130-MS; AOD4130-VB;

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Parameters

Open channel resistance:	38mOhm
Max. drain current:	30A
Max. power loss:	34,7W
Case:	TO252 (DPACK) t/r
Manufacturer:	HXY MOSFET
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: HXY Manufacturer part number: AOD4130-HXY RoHS Case style: TO252 (DPACK) t/r Datasheet

In stock:

100 pcs.

Quantity of pcs.	2+	10+	40+	150+	600+
Net price (EUR)	0,4858	0,2920	0,2300	0,2051	0,1941

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Packaging:
150 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	38mOhm
Max. drain current:	30A
Max. power loss:	34,7W
Case:	TO252 (DPACK) t/r
Manufacturer:	HXY MOSFET
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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