AP2310GN JGSEMI

Symbol Micros: TAP2310gn-hf-3 JGS
Contractor Symbol:
Case : SOT23
Technical drawing
Transistor N-Channel MOSFET; 60V; 20V; 100mOhm; 3A; 1,56W; -50°C ~ 125°C; Equivalent: AP2310GN-HF-3;
Parameters
Open channel resistance: 100mOhm
Max. drain current: 3A
Max. power loss: 1,56W
Case: SOT23
Manufacturer: JGSEMI
Max. drain-source voltage: 60V
Transistor type: N-MOSFET
Manufacturer:: JGSEMI Manufacturer part number: AP2310GN RoHS Case style: SOT23t/r Datasheet
In stock:
500 pcs.
Quantity of pcs. 5+ 20+ 100+ 500+ 2000+
Net price (EUR) 0,3008 0,1660 0,1101 0,0917 0,0861
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Packaging:
500
Open channel resistance: 100mOhm
Max. drain current: 3A
Max. power loss: 1,56W
Case: SOT23
Manufacturer: JGSEMI
Max. drain-source voltage: 60V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -50°C ~ 125°C
Mounting: SMD