AP2311GN-HF-3 ADVANCED POWER

Symbol Micros: TAP2311gn-hf-3
Contractor Symbol:
Case : SOT23
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P-MOSFET 1.8A 60V 1.38W 0.25Ω
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Parameters
Open channel resistance: 300mOhm
Max. drain current: 1,8A
Max. power loss: 1,38W
Case: SOT23
Manufacturer: Advanced Power Electronics Corp.
Max. drain-source voltage: 60V
Transistor type: P-MOSFET
Manufacturer:: Advanced Power Electronics Corp. Manufacturer part number: AP2311GN-HF-3 Pbf B22D Case style: SOT23t/r Datasheet
In stock:
0 pcs.
Quantity of pcs. 3+ 20+ 100+ 300+ 1000+
Net price (EUR) 0,2784 0,1477 0,1146 0,1056 0,1012
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Packaging:
1000
Manufacturer:: Advanced Power Electronics Corp. Manufacturer part number: AP2311GN-HF RoHS Case style: SOT23t/r Datasheet
In stock:
15045 pcs.
Quantity of pcs. 3+ 20+ 100+ 300+ 1000+
Net price (EUR) 0,2784 0,1477 0,1146 0,1056 0,1012
Add to comparison tool
Packaging:
3000
Manufacturer:: Advanced Power Electronics Corp. Manufacturer part number: AP2311GN RoHS Case style: SOT23t/r Datasheet
In stock:
560 pcs.
Quantity of pcs. 3+ 20+ 100+ 300+ 1000+
Net price (EUR) 0,2784 0,1477 0,1146 0,1056 0,1012
Add to comparison tool
Packaging:
3000
Open channel resistance: 300mOhm
Max. drain current: 1,8A
Max. power loss: 1,38W
Case: SOT23
Manufacturer: Advanced Power Electronics Corp.
Max. drain-source voltage: 60V
Transistor type: P-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD

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