AP4435GH APEC

Symbol Micros: TAP4435gh

107510

TAP4435gh

Contractor Symbol:

Case : TO252

Datasheet

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P-MOSFET 30C 20mΩ 20A 44.6W

Parameters

Open channel resistance:	36mOhm
Max. drain current:	40A
Max. power loss:	44,6W
Case:	TO252
Manufacturer:	Advanced Power Electronics Corp.
Max. drain-source voltage:	30V
Transistor type:	P-MOSFET

All parameters

Manufacturer:: Advanced Power Electronics Corp. Manufacturer part number: AP4435GH-HF RoHS Case style: TO252t/r Datasheet

In stock:

40 pcs.

Quantity of pcs.	3+	10+	50+	200+	1000+
Net price (EUR)	0,4198	0,2759	0,1974	0,1726	0,1618

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Packaging:
200 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	36mOhm
Max. drain current:	40A
Max. power loss:	44,6W
Case:	TO252
Manufacturer:	Advanced Power Electronics Corp.
Max. drain-source voltage:	30V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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