AP4435GJ APEC

Symbol Micros: TAP4435gj
Contractor Symbol:
Case : TO251 (IPACK)
P-MOSFET 30V 20mΩ 40A 44.6W
Parameters
Open channel resistance: 36mOhm
Max. drain current: 40A
Max. power loss: 44,6W
Case: TO251 (IPACK)
Manufacturer: Advanced Power Electronics Corp.
Max. drain-source voltage: 30V
Transistor type: P-MOSFET
Manufacturer:: Advanced Power Electronics Corp. Manufacturer part number: AP4435GJ-HF RoHS Case style: TO251 (IPACK) Datasheet
In stock:
36 pcs.
Quantity of pcs. 2+ 10+ 30+ 100+ 400+
Net price (EUR) 0,6674 0,4198 0,3467 0,3089 0,2901
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Packaging:
100
Open channel resistance: 36mOhm
Max. drain current: 40A
Max. power loss: 44,6W
Case: TO251 (IPACK)
Manufacturer: Advanced Power Electronics Corp.
Max. drain-source voltage: 30V
Transistor type: P-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: THT