AP4435GJ APEC

Symbol Micros: TAP4435gj

107511

TAP4435gj

Contractor Symbol:

Case : TO251 (IPACK)

Datasheet

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P-MOSFET 30V 20mΩ 40A 44.6W

Parameters

Open channel resistance:	36mOhm
Max. drain current:	40A
Max. power loss:	44,6W
Case:	TO251 (IPACK)
Manufacturer:	Advanced Power Electronics Corp.
Max. drain-source voltage:	30V
Transistor type:	P-MOSFET

All parameters

Manufacturer:: Advanced Power Electronics Corp. Manufacturer part number: AP4435GJ-HF RoHS Case style: TO251 (IPACK) Datasheet

In stock:

36 pcs.

Quantity of pcs.	2+	10+	30+	100+	400+
Net price (EUR)	0,6636	0,4174	0,3447	0,3072	0,2884

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Packaging:
100 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	36mOhm
Max. drain current:	40A
Max. power loss:	44,6W
Case:	TO251 (IPACK)
Manufacturer:	Advanced Power Electronics Corp.
Max. drain-source voltage:	30V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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