AP4435GM-HF ADVANCED POWER

Symbol Micros: TAP4435gm-hf-3

88420

TAP4435gm-hf-3

Contractor Symbol:

Case : SO 8

Datasheet

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P-MOSFET 30V 9A 2.5W

Parameters

Open channel resistance:	32mOhm
Max. drain current:	9A
Max. power loss:	2,5W
Case:	SO 8
Manufacturer:	Advanced Power Electronics Corp.
Max. drain-source voltage:	30V
Transistor type:	P-MOSFET

All parameters

Manufacturer:: Advanced Power Electronics Corp. Manufacturer part number: AP4435GM RoHS Case style: SO 8 Datasheet

In stock:

30 pcs.

Quantity of pcs.	3+	20+	100+	300+	1000+
Net price (EUR)	0,4174	0,2298	0,1806	0,1672	0,1604

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Packaging:
100 Quantity (multiple: 1)

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Manufacturer:: Advanced Power Electronics Corp. Manufacturer part number: AP4435GM RoHS Case style: SOP08t/r Datasheet

In stock:

200 pcs.

Quantity of pcs.	3+	10+	50+	200+	1000+
Net price (EUR)	0,4080	0,2673	0,1916	0,1677	0,1571

Add to comparison tool Add inquiry (RFQ)

Packaging:
200 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	32mOhm
Max. drain current:	9A
Max. power loss:	2,5W
Case:	SO 8
Manufacturer:	Advanced Power Electronics Corp.
Max. drain-source voltage:	30V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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