AP4435GM-HF ADVANCED POWER

Symbol Micros: TAP4435gm-hf-3
Contractor Symbol:
Case : SO 8
P-MOSFET 30V 9A 2.5W
Parameters
Open channel resistance: 32mOhm
Max. drain current: 9A
Max. power loss: 2,5W
Case: SO 8
Manufacturer: Advanced Power Electronics Corp.
Max. drain-source voltage: 30V
Transistor type: P-MOSFET
Manufacturer:: Advanced Power Electronics Corp. Manufacturer part number: AP4435GM RoHS Case style: SOP08t/r Datasheet
In stock:
200 pcs.
Quantity of pcs. 3+ 10+ 50+ 200+ 1000+
Net price (EUR) 0,4103 0,2688 0,1927 0,1686 0,1580
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Packaging:
200
Manufacturer:: Advanced Power Electronics Corp. Manufacturer part number: AP4435GM RoHS Case style: SO 8 Datasheet
In stock:
30 pcs.
Quantity of pcs. 3+ 20+ 100+ 300+ 1000+
Net price (EUR) 0,4198 0,2311 0,1816 0,1681 0,1613
Add to comparison tool
Packaging:
100
Open channel resistance: 32mOhm
Max. drain current: 9A
Max. power loss: 2,5W
Case: SO 8
Manufacturer: Advanced Power Electronics Corp.
Max. drain-source voltage: 30V
Transistor type: P-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD