AP4800DGM APEC

Symbol Micros: TAP4800dgm

107541

TAP4800dgm

Contractor Symbol:

Case : SOP08

Datasheet

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N-MOSFET 30V 18mΩ 9A 2W

Parameters

Open channel resistance:	30mOhm
Max. drain current:	9A
Max. power loss:	2W
Case:	SOP08
Manufacturer:	Advanced Power Electronics Corp.
Max. drain-source voltage:	30V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Advanced Power Electronics Corp. Manufacturer part number: AP4800DGM-HF RoHS Case style: SOP08t/r Datasheet

In stock:

200 pcs.

Quantity of pcs.	3+	10+	50+	200+	1000+
Net price (EUR)	0,3608	0,2358	0,1691	0,1479	0,1387

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Packaging:
200 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	30mOhm
Max. drain current:	9A
Max. power loss:	2W
Case:	SOP08
Manufacturer:	Advanced Power Electronics Corp.
Max. drain-source voltage:	30V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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