AP60T10GS-HF-3 ADVANCED POWER

Symbol Micros: TAP60t10gs-hf-3
Contractor Symbol:
Case : TO263 (D2PAK)
N-MOSFET 67A 100V 167W 0.018Ω AP60T10GS-HF-3TR
Parameters
Open channel resistance: 18mOhm
Max. drain current: 67A
Max. power loss: 167W
Case: TO263 (D2PAK)
Manufacturer: Advanced Power Electronics Corp.
Max. drain-source voltage: 100V
Transistor type: N-MOSFET
Manufacturer:: Advanced Power Electronics Corp. Manufacturer part number: AP60T10GS-HF-3TR RoHS Case style: TO263t/r (D2PAK) Datasheet
In stock:
435 pcs.
Quantity of pcs. 1+ 5+ 20+ 100+ 500+
Net price (EUR) 1,1326 0,7527 0,6237 0,5628 0,5393
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Packaging:
500
Open channel resistance: 18mOhm
Max. drain current: 67A
Max. power loss: 167W
Case: TO263 (D2PAK)
Manufacturer: Advanced Power Electronics Corp.
Max. drain-source voltage: 100V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD