AP60T10GS-HF-3 ADVANCED POWER

Symbol Micros: TAP60t10gs-hf-3

88217

TAP60t10gs-hf-3

Contractor Symbol:

Case : TO263 (D2PAK)

Datasheet

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N-MOSFET 67A 100V 167W 0.018Ω AP60T10GS-HF-3TR

Parameters

Open channel resistance:	18mOhm
Max. drain current:	67A
Max. power loss:	167W
Case:	TO263 (D2PAK)
Manufacturer:	Advanced Power Electronics Corp.
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Advanced Power Electronics Corp. Manufacturer part number: AP60T10GS-HF-3TR RoHS Case style: TO263t/r (D2PAK) Datasheet

In stock:

435 pcs.

Quantity of pcs.	1+	5+	20+	100+	500+
Net price (EUR)	1,1391	0,7570	0,6273	0,5660	0,5424

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Packaging:
500 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	18mOhm
Max. drain current:	67A
Max. power loss:	167W
Case:	TO263 (D2PAK)
Manufacturer:	Advanced Power Electronics Corp.
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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