AP80N03GP APEC

Symbol Micros: TAP80n03gp

107543

TAP80n03gp

Contractor Symbol:

Case : TO220

Datasheet

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N-MOSFET 30V 8mΩ 80A 83.3W

Parameters

Open channel resistance:	12mOhm
Max. drain current:	80A
Max. power loss:	83,3W
Case:	TO220
Manufacturer:	Advanced Power Electronics Corp.
Max. drain-source voltage:	30V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Advanced Power Electronics Corp. Manufacturer part number: AP80N03GP RoHS Case style: TO220 Datasheet

In stock:

75 pcs.

Quantity of pcs.	2+	10+	50+	100+	400+
Net price (EUR)	0,6250	0,3915	0,3066	0,2901	0,2712

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Packaging:
50/100 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	12mOhm
Max. drain current:	80A
Max. power loss:	83,3W
Case:	TO220
Manufacturer:	Advanced Power Electronics Corp.
Max. drain-source voltage:	30V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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