AP9926GEO APEC

Symbol Micros: TAP9926geo

107545

TAP9926geo

Contractor Symbol:

Case : TSSOP08

Datasheet

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2xN-MOSFET 20V 28mΩ 4.6A 1W

Parameters

Open channel resistance:	40mOhm
Max. drain current:	4,6A
Max. power loss:	1W
Case:	TSSOP08
Manufacturer:	Advanced Power Electronics Corp.
Max. drain-source voltage:	20V
Transistor type:	2xN-MOSFET

All parameters

Manufacturer:: Advanced Power Electronics Corp. Manufacturer part number: AP9926GEO RoHS Case style: TSSOP08 t/r Datasheet

In stock:

180 pcs.

Quantity of pcs.	3+	10+	50+	200+	1000+
Net price (EUR)	0,3304	0,2160	0,1548	0,1352	0,1268

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Packaging:
200 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	40mOhm
Max. drain current:	4,6A
Max. power loss:	1W
Case:	TSSOP08
Manufacturer:	Advanced Power Electronics Corp.
Max. drain-source voltage:	20V
Transistor type:	2xN-MOSFET
Max. gate-source Voltage:	12V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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